Transphorm Demonstrates a Bidirectional SuperGaN Power Supply with New Reference Design for E-Mobility and Energy/Industrial Markets
11 Giugno 2024 - 9:00AM
Business Wire
300 W DC-to-DC Battery Charger Board Showcases
Key Capability of GaN Technology Necessary to Advance E-Mobility
Applications
Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN
power semiconductors, today announced the release of a new 300 W
DC-to-DC GaN reference design for 2- and 3-wheeled electric vehicle
battery chargers. The TDDCDC-TPH-IN-BI-LLC-300W-RD design uses
TP65H150G4PS 150 mOhm SuperGaN® FETs in a robust TO-220 package to
power a high performing, high efficiency energy harvesting and
distribution battery charging system. The new board notably
demonstrates one of the most anticipated value propositions of a
GaN power supply: bidirectionality. This capability
indicates that a single power system can deliver power in two
directions from input (AC) to output (DC) and output (DC) to input
(AC) depending on system needs, with GaN enabling energy efficiency
in both conversions.
“The first value proposition of GaN in high power applications
was realized by the highly efficient operation of the bridgeless
totem-pole power factor correction circuit. This subsequently led
to the next level of benefits across a variety of topologies,
including overall smaller and lower-cost power systems across the
full power conversion spectrum, from 30 watts to over 10
kilowatts,” said Primit Parikh, President and CEO, Transphorm.
“Continuing the leadership of Transphorm GaN in higher power
applications, we have now demonstrated bidirectional power
conversion that can be used by vehicle on-board chargers for
e-mobility, renewable energy and backup power systems, and other
power supply applications requiring highly integrated,
interchangeable input and output terminals.”
Bidirectionality is a core capability required to advance V2X
(vehicle-to-everything) infrastructure for e-mobility applications
that comprise V2L (vehicle-to-load), V2H (vehicle-to-house), and
V2G (vehicle-to-grid) scenarios, which represent a projected
overall V2X system market size ranging from a conservative 9
billion USD to an aggressive 70 billion USD by 2030.
In EV systems, renewable energy systems, and other applications
within the V2X model, design and performance flexibility will be
critical to innovation and wider deployment. The high power density
and bidirectionality is a key enabler for this area. The V2X
applications are prime use cases that can truly leverage all the
SuperGaN technology’s superior value proposition. This new
reference design is an exciting example of what’s possible in a
future enabled by SuperGaN technology.
TDDCDC-TPH-IN-BI-LLC-300W-RD Reference Design
Specifications
The TDDCDC-TPH-IN-BI-LLC-300W-RD board is a fully analog
implementation without complex firmware development for the power
stage. This design configuration enables simpler and faster power
system development.
Specification highlights follow:
Topology
Full-Bridge LLC
Convection Cooling
Natural convention without forced air
Output Power
300 W
Output Voltage
48 V/6 A, 380 V/0.9 A
Peak Efficiency
97.3%
Power Density
36.5 W/in3
Target Applications and Availability
The TDDCDC-TPH-IN-BI-LLC-300W-RD board is ideal for high power
density applications such as the DC-to-DC power stage of
bidirectional DC-to-AC inverter power supplies used in energy
harvesting applications with solar-, battery- and/or grid-tied
solutions as well as AC-to-DC power supplies used in 2-, 3-, and
4-wheeler battery chargers.
The design guide and BOM can be downloaded here:
https://www.transphormusa.com/en/reference-design/tddcdc-tph-in-bi-llc-300w-rd/.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs
and manufactures high performance and high reliability GaN
semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than
1,000 owned or licensed patents, Transphorm produces the industry’s
first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor
devices. The Company’s vertically integrated device business model
allows for innovation at every development stage: design,
fabrication, device, and application support. Transphorm’s
innovations move power electronics beyond the limitations of
silicon to achieve over 99% efficiency, 50% more power density and
20% lower system cost. Transphorm is headquartered in Goleta,
California and has manufacturing operations in Goleta and Aizu,
Japan. For more information, please visit www.transphormusa.com.
Follow us on Twitter @transphormusa and WeChat at
Transphorm_GaN.
The SuperGaN mark is a registered trademark of
Transphorm, Inc. All other trademarks are the property of their
respective owners.
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version on businesswire.com: https://www.businesswire.com/news/home/20240611780497/en/
Press Contact: Heather Ailara +1.973.567.6040
heather.ailara@transphormusa.com
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